State-of-the-art mask alignment technology on a minimized footprint area for up to 150 mm wafer size.
The JBX-8100FS is a spot beam/vector scan electron beam lithography system incorporating
a thermal field emission electron gun. Customers can choose the G1 class for an entry model
or the G2 class for a full option system.
Up to 3 levels: 100 kV, 50 kV (optional), and 25 kV
(optional); auto selection of voltage level.
0.6 nm for ultra high accuracy positioning.
Minimum beam width 1.8 nm supporting ultra fine
pattern writing including a minimum line width of 8
nm or less.
125 MHz for high speed writing.
Two exposure modes (high resolution and high speed
modes) for a wide range of applications from ultra
fine pattern writing to speed oriented writing of small
to mid-size patterns for production.