Inspection & Characterization

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Inspection & Characterization

Photolithography is a sequence of process steps which allows to replicate or create a pattern on a substrate before performing any additive (lift-off) or substractive (etching) steps. This is achieved by using a photosensitive polymer, the photoresist, that reacts with blue-UV (350nm – 440nm) or DUV (248nm) light to become soluble. The photoresist is generally diluted with a solvent, dispensed on the wafer, and spin-coated to reach its final thickness. Then, it is baked to remove the residual solvent content.

Patterning can be done using different methods: 1) Using a mask that locally blocks the UV light with a thin layer of chromium in order to replicate (mask-aligner) or project (stepper) the mask pattern on the wafer, 2) Using a focussed UV laser spot that writes the pattern directly on the wafer (direct laser writing), 3) Using interferences to create periodic intensity patterns (interference lithography), etc…