Low-temperature deposition of high-quality dielectric films (SiO2, Si3N4, SiOxNy, SiC) on semiconductor and organic substrates.
The SI 500 D features exceptional plasma properties like high density, low ion energy, and low pressure plasma deposition of dielectric films.
SENTECH proprietary Planar Triple Spiral Antenna (PTSA) ICP plasma source allows for highly efficient low power coupling.
Low etch rate, high breakdown voltage, low stress, no damage of substrate, and very low interface state density down to deposition temperatures of less than 100 °C allow for outstanding properties of the deposited films.
The substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent stable process conditions over a wide temperature range from room temperature up to 350 °C.
The SI 500 D configured with SiH4, HN3, CF4, CH4, H2, Ar, O2, N2 gases.
SiO2, Si3N4, SiOxNy, a-Si