The SI 500 C was developed especially for small scale production and for research and development. It has two etch mechanism,
Cryogenic and Bosch.
Deep etching of silicon, achieved using the Bosch process or cryogenic microfabrication technologies, is routinely used for MEMS manufacturing to create deep micro-structures with high aspect ratios.
The inductively coupled plasma etch system SI 500 C enables the application of a wide range of plasma etching processes from normal RIE to high densit processes also at extremely low temperatures down to -150°C .
The Bosch Process is a high-aspect ratio plasma etching process. This process is consisted of the cyclic isotropic etching and fluorocarbon-based protection film deposition by quick gas switching. The SF6 plasma cycle etches silicon, and the C4F8 plasma cycle creates a protection layer.
Cryogenic etch is a one-step technique that cools the structure during the process, which prevents unwanted reactions that can impact the etch profiles.
Due to the absence of an electric field near the reactor walls, there is virtually no ion bombardment or erosion of the walls.
DRIE is capable of forming vertically smooth sidewalls at high etching speed (>10 µm/min).
High-density plasma, high gas conductance, and fast process switching enable superior profile control.
For etch depths greater than 100 µm
Up to 4”, 6” or 8” wafers and carriers.
SF6, O2, C4F8, Ar, CHF3, CF4
Substrate temperature from -150 °C to 200 °C
ICP power: 1200 W
Bias power: 600 W