The Solaris 150 is a manually loaded Rapid Thermal Processing System capable of processing silicon, III-V, and other substrates up to 150 mm diameter.
Rapid thermal processing up to 1200 °C on 6 inch substrates.
Featured steady state temperature range: Ambient – 1200 °C.
Steady state process time: 0.1 sec to unlimited time.
Temperature accuracy & stability +/- 2.5 °C.
Temperature uniformity: +/- 2.5 °C or better across 150 mm wafer at all temperatures.
Wafer diameter sizes: small pieces to 150 mm.
Ramp rate: up to 150 °C /sec.
SiC holder for III-V wafer processing.
High accuracy K type thermo-couple “in-contact” with wafer underside.
Mass flow controller: Full gas mixing capability, valves and mass flow transducers are fully controlled by the system.
Gas flow can be changed at each step of a recipe N2, Forming gas, Ar.
Diffusion and annealing applications